By alexandreCommunication

A 220-GHz Sliding-IF Quadrature Transmitter and Receiver Chipset for High Data Rate Communication in 0.13-µm SiGe BiCMOS

A 220-GHz Sliding-IF Quadrature Transmitter and Receiver Chipset for High Data Rate Communication in 0.13-µm SiGe BiCMOS

High data rate communication has become increasingly important with the rise of advanced technologies such as 5G, wireless virtual reality, and autonomous vehicles. To meet the demands of these applications, researchers have been exploring new ways to transmit and receive data at higher frequencies. In a recent study, a 220-GHz sliding-IF quadrature transmitter and receiver chipset was developed using 0.13-µm SiGe BiCMOS technology.

1. Introduction

The rapid growth of internet of things (IoT) devices and the need for high-speed data transfer calls for the development of efficient and reliable communication systems. Millimeter-wave frequencies, such as 220 GHz, offer significant advantages in terms of available bandwidth and data rate. However, designing transmitters and receivers for such high frequencies comes with several challenges, including power consumption, signal integrity, and suitable semiconductor technology. The use of SiGe BiCMOS technology has emerged as a promising solution due to its high performance and low cost.

In this study, a sliding-IF (intermediate frequency) architecture was used to achieve high data rates at the 220-GHz frequency range. The sliding-IF technique allows for wider bandwidth and reduced complexity compared to traditional architectures. The use of a 0.13-µm SiGe BiCMOS process enables the integration of both the transmitter and receiver onto a single chip, resulting in a compact and efficient solution.

2. Transmitter Design

The transmitter chip was designed to generate a 220-GHz carrier signal and modulate it with data. It consists of a voltage-controlled oscillator (VCO), frequency divider, phase-locked loop (PLL), and modulator. The VCO generates the carrier signal, which is then divided down to a lower frequency for modulation. The PLL ensures precise frequency synchronization, while the modulator combines the modulating data with the carrier signal. The sliding-IF architecture allows for direct modulation at the final frequency, eliminating the need for upconversion stages.

The SiGe BiCMOS technology offers high-frequency capabilities and low power consumption, making it suitable for designing the transmitter chip. The integration of multiple components on a single chip further improves efficiency and reduces the overall size of the system. The sliding-IF architecture ensures a wide bandwidth and high data rate, making it an ideal choice for high-speed communication applications.

3. Receiver Design

The receiver chip was designed to amplify and demodulate the received signal at 220 GHz. It consists of a low-noise amplifier (LNA), downconverter, coupling circuit, and baseband amplifier. The LNA amplifies the weak incoming signal, while the downconverter converts the high-frequency signal to a lower intermediate frequency. The coupling circuit ensures proper impedance matching between the antenna and the receiver, maximizing power transfer. Finally, the baseband amplifier amplifies the demodulated signal for further processing.

The receiver chip takes advantage of the sliding-IF architecture to directly receive signals at 220 GHz, eliminating the need for downconversion stages. The use of SiGe BiCMOS technology allows for high-performance amplification and demodulation, ensuring reliable reception of high-speed data. The compact design and integration of multiple components on a single chip make it suitable for small form-factor applications.

4. Conclusion

The development of a 220-GHz sliding-IF quadrature transmitter and receiver chipset using 0.13-µm SiGe BiCMOS technology opens up new possibilities for high data rate communication. The sliding-IF architecture eliminates the need for upconversion and downconversion stages, reducing complexity and improving efficiency. The integration of both the transmitter and receiver on a single chip allows for compact and cost-effective solutions. With further advancements in semiconductor technology, such chipset designs hold great potential in enabling future high-speed wireless communication systems.